Evaluating the Robustness of Complementary Channel Ferroelectric FETs Against Total Ionizing Dose Towards Radiation-Tolerant Embedded Nonvolatile Memory

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Document type:: Zeitschriftenaufsatz
Author(s):: Jiang, Zhouhang; Guo, Zixiang; Luo, Xuyi; Sayed, Munazza; Faris, Zubair; Mulaosmanovic, Halid; Dünkel, Stefan; Soss, Steven; Beyer, Sven; Gong, Xiao; Kurinec, Santosh; Narayanan, Vijaykrishnan; Amrouch, Hussam; Zhang, En; Fleetwood, Daniel; Schrimpf, Ronald; Ni, Kai
Title:: Evaluating the Robustness of Complementary Channel Ferroelectric FETs Against Total Ionizing Dose Towards Radiation-Tolerant Embedded Nonvolatile Memory
Journal title:: IEEE Electron Device Letters (EDL)
Year:: 2023
Journal volume:: PP
Month:: 01
Pages contribution:: 1-1
Fulltext / DOI:: doi:10.1109/LED.2023.3332071
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