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Title:

Evaluating the Robustness of Complementary Channel Ferroelectric FETs Against Total Ionizing Dose Towards Radiation-Tolerant Embedded Nonvolatile Memory

Document type:
Zeitschriftenaufsatz
Author(s):
Jiang, Zhouhang; Guo, Zixiang; Luo, Xuyi; Sayed, Munazza; Faris, Zubair; Mulaosmanovic, Halid; Dünkel, Stefan; Soss, Steven; Beyer, Sven; Gong, Xiao; Kurinec, Santosh; Narayanan, Vijaykrishnan; Amrouch, Hussam; Zhang, En; Fleetwood, Daniel; Schrimpf, Ronald; Ni, Kai
Journal title:
IEEE Electron Device Letters (EDL)
Year:
2023
Journal volume:
PP
Month:
01
Pages contribution:
1-1
Fulltext / DOI:
doi:10.1109/LED.2023.3332071
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