Evaluating the Robustness of Complementary Channel Ferroelectric FETs Against Total Ionizing Dose Towards Radiation-Tolerant Embedded Nonvolatile Memory

Benutzer: Gast

Dokumenttyp:: Zeitschriftenaufsatz
Autor(en):: Jiang, Zhouhang; Guo, Zixiang; Luo, Xuyi; Sayed, Munazza; Faris, Zubair; Mulaosmanovic, Halid; Dünkel, Stefan; Soss, Steven; Beyer, Sven; Gong, Xiao; Kurinec, Santosh; Narayanan, Vijaykrishnan; Amrouch, Hussam; Zhang, En; Fleetwood, Daniel; Schrimpf, Ronald; Ni, Kai
Titel:: Evaluating the Robustness of Complementary Channel Ferroelectric FETs Against Total Ionizing Dose Towards Radiation-Tolerant Embedded Nonvolatile Memory
Zeitschriftentitel:: IEEE Electron Device Letters (EDL)
Jahr:: 2023
Band / Volume:: PP
Monat:: 01
Seitenangaben Beitrag:: 1-1
Volltext / DOI:: doi:10.1109/LED.2023.3332071
BibTeX