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Titel:

Influence of stop and gate voltage on resistive switching of 1T1R HfO2-based memristors, a modeling and variability analysis

Dokumenttyp:
Zeitschriftenaufsatz
Autor(en):
Maldonado, David; Cantudo, Antonio; Reddy, Keerthi Dorai Swamy; Pechmann, Stefan; Uhlmann, Max; Wenger, Christian; Roldan, Juan Bautista; Perez, Eduardo
Abstract:
Memristive devices, particularly resistive random access memory (RRAM) cells based on hafnium oxide (HfO₂) dielectrics, exhibit promising characteristics for a wide range of applications. In spite of their potential, issues related to intrinsic variability and the need for precise simulation tools and modeling methods remain a medium-term hurdle. This study addresses these challenges by investigating the resistive switching (RS) behavior of different 1T1R HfO₂-based memristive devices under vari...     »
Stichworte:
Memristive device, Resistive switching, Parameters extraction, Variability, Reset stop voltage, Gate voltage, Circuit breaker simulation
Zeitschriftentitel:
Materials Science in Semiconductor Processing
Jahr:
2024
Band / Volume:
182
Seitenangaben Beitrag:
108726
Volltext / DOI:
doi:10.1016/j.mssp.2024.108726
WWW:
https://www.sciencedirect.com/science/article/pii/S136980012400622X
Print-ISSN:
1369-8001
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