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- Titel:
Very High In-Plane Magnetic Field Sensitivity in Ion-Implanted 4H-SiC PIN Diodes
- Dokumenttyp:
- Report / Forschungsbericht
- Autor(en):
- Okeil, H.; Erlbacher, T.; Wachutka, G.
- Herausgeber:
- Advanced Electronic Materials Open Access
- Band / Teilband / Volume:
- 10
- Abstract:
- In this study ion-implanted lateral 4H-SiC pin diodes are reported, which show an unexpectedly high room temperature in-plane magnetic field sensitivity approaching 100 % at 0.5 Tesla. Using dedicated TCAD simulations the underlying transduction mechanism is studied, and the effect of implantation-induced carrier traps on the observed high sensitivity is unraveled. The study shows how such traps can greatly control the injection conditions at the highly doped implant regions providing a plausibl... »
- Stichworte:
- 4H-SiC pin diode; injection confinement; ion implant-induced traps; magnetic field sensitivity; tesla; TCAD; transduction; implantation; high sensitivity; simulation; implant; Okeil, H.; Erlbacher, T.; Wachutka, G.
- Dewey Dezimalklassifikation:
- 620
- Beauftragende Einrichtung:
- Technische Universität München
- Publikationsdatum:
- 10.05.2024
- Jahr:
- 2024
- Monat:
- Oct
- Seiten/Umfang:
- 2300531-2300546/15
- Sprache:
- en
- WWW:
- https://onlinelibrary.wiley.com/doi/full/10.1002/aelm.202300531
- Copyright Informationen:
- ©2024 The Authors. Advanced Electronic Materials published by Wiley-VCH GmbH This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.
- TUM Einrichtung:
- CIT, EE, Professorship of Microsensors and Actuators; (Chair of Physics of Electrotechnology)
- Eingabe:
- 21.10.2024
- Letzte Änderung:
- 21.10.2024
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