4H-SiC Lateral Magnetotransistor with Sub-Microtesla In-Plane Magnetic Field Detectivity

In this letter, we report on the first 4H-SiC based lateral magnetotransistor. The sensor is fabricated in a 4H-SiC wafer scale Bipolar-CMOS-DMOS (BCD) technology and exhibits high sensitivity to in-plane magnetic fields, reaching 960 μA/T. We study its electrical and magnetic characteristics and measure the achievable magnetic field detectivity. A minimum noise-limited detectivity of 273 nT/√Hz is achieved. Using TCAD simulations, we study the underlying transduction mechanism and identify electron hole plasma modulation as the main operating principle.     «

In this letter, we report on the first 4H-SiC based lateral magnetotransistor. The sensor is fabricated in a 4H-SiC wafer scale Bipolar-CMOS-DMOS (BCD) technology and exhibits high sensitivity to in-plane magnetic fields, reaching 960 μA/T. We study its electrical and magnetic characteristics and measure the achievable magnetic field detectivity. A minimum noise-limited detectivity of 273 nT/√Hz is achieved. Using TCAD simulations, we study the underlying transduction mechanism and identify ele...     »