4H–SiC Vertical Magnetotransistor with Microtesla Detectivity up to 500 °C

In this Letter, we demonstrate the operation of an in-plane magnetic field sensitive 4H–SiC vertical magnetotransistor over a wide range of temperatures, ranging from room temperature up to 500 °C. The sensor is realized using the ion-implanted wells of a wafer-scale 4H–SiC Bipolar-CMOS-DMOS technology. We measure and analyze the sensor's DC characteristics, magnetic sensitivity, linearity, and noise performance and determine the achievable magnetic detectivity, which lies in the low μT/ √ Hz regime up to 500 °C. Furthermore, we elaborate on the origin of the observed magnetic sensitivity using TCAD simulations.     «

In this Letter, we demonstrate the operation of an in-plane magnetic field sensitive 4H–SiC vertical magnetotransistor over a wide range of temperatures, ranging from room temperature up to 500 °C. The sensor is realized using the ion-implanted wells of a wafer-scale 4H–SiC Bipolar-CMOS-DMOS technology. We measure and analyze the sensor's DC characteristics, magnetic sensitivity, linearity, and noise performance and determine the achievable magnetic detectivity, which lies in the low μT/ √ Hz re...     »

magnetic field; 4H-SiC; magnetotransistor; high temperature; 500°C; ion; ion weels; wafer-scale; CMOS; DMOS; bipolar; measurement; DC; sensor; magnetic sensitivity; linearity; noise; detectivity; TCAD; simulation; performance; MEMS; time-dependent; GaN-on-GaN; conductivity; diode; microtesla; magnetotransistor; Okeil, H.; Wachutka, G.; semiconductor; carbon; Monte Carlo; under zero; high voltage; aluminium; ionisation; ionization; moleküle; frequenz; Frauenhofer; Chip; Schaub S.; amplifiers; low-pass filters; noise     «

magnetic field; 4H-SiC; magnetotransistor; high temperature; 500°C; ion; ion weels; wafer-scale; CMOS; DMOS; bipolar; measurement; DC; sensor; magnetic sensitivity; linearity; noise; detectivity; TCAD; simulation; performance; MEMS; time-dependent; GaN-on-GaN; conductivity; diode; microtesla; magnetotransistor; Okeil, H.; Wachutka, G.; semiconductor; carbon; Monte Carlo; under zero; high voltage; aluminium; ionisation; ionization; moleküle; frequenz; Fraue...     »