Relaxation of interfacial stress and improved quality of heteroepitaxial 3C-SiC films on (100)Si deposited by organometallic chemical vapor deposition at 1200 degrees C

Titel:: Relaxation of interfacial stress and improved quality of heteroepitaxial 3C-SiC films on (100)Si deposited by organometallic chemical vapor deposition at 1200 degrees C
Autor(en):: VEPREK, S; KUNSTMANN, T; VOLM, D; al., et
Zeitschriftentitel:: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
Jahr:: 1997
Band / Volume:: 15
Heft / Issue:: 1
Seitenangaben Beitrag:: 10-17
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