PROPERTIES OF POLYCRYSTALLINE SILICON PREPARED BY CHEMICAL-TRANSPORT IN HYDROGEN PLASMA AT TEMPERATURES BETWEEN 80-DEGREES-C AND 400-DEGREES-C
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS
1981
14
3
295-308
PARAMETERS CONTROLLING THE DEPOSITION OF AMORPHOUS AND MICROCRYSTALLINE SILICON IN SI-H DISCHARGE PLASMAS
JOURNAL DE PHYSIQUE
1981
42
NC4
251-255
LATTICE EXPANSION OF SMALL SILICON CRYSTALLITES IMPLICATIONS FOR A-SI
HELVETICA PHYSICA ACTA
1981
54
2
244-244
LATTICE DILATATION OF SMALL SILICON CRYSTALLITES - IMPLICATIONS FOR AMORPHOUS-SILICON
SOLID STATE COMMUNICATIONS
1981
39
3
509-512
PREPARATION AND PROPERTIES OF AMORPHOUS PHOSPHORUS NITRIDE PREPARED IN A LOW-PRESSURE PLASMA
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES
1981
43
3
527-547
ON THE INTERPRETATION OF THE 1ST, SHARP MAXIMUM IN THE X-RAY-SCATTERING PATTERN OF NON-CRYSTALLINE SOLIDS AND LIQUIDS
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES
1981
44
5
557-567
RAMAN-SCATTERING FROM SMALL PARTICLE-SIZE POLYCRYSTALLINE SILICON
SOLID STATE COMMUNICATIONS
1981
37
12
993-996
RAMAN-SCATTERING FROM HYDROGENATED MICROCRYSTALLINE AND AMORPHOUS SI
HELVETICA PHYSICA ACTA
1981
54
4
604-604