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Titel:

Relaxation of interfacial stress and improved quality of heteroepitaxial 3C-SiC films on (100)Si deposited by organometallic chemical vapor deposition at 1200 degrees C

Autor(en):
VEPREK, S; KUNSTMANN, T; VOLM, D; al., et
Zeitschriftentitel:
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
Jahr:
1997
Band / Volume:
15
Heft / Issue:
1
Seitenangaben Beitrag:
10-17
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