- Titel:
Pseudomorphic growth of ultrathin cubic 3C-SiC films on Si(100) by temperature programmed organometallic chemical vapor deposition
- Autor(en):
- HOFMANN, J; VEPREK, S; HEINDL, J
- Zeitschriftentitel:
- JOURNAL OF APPLIED PHYSICS
- Jahr:
- 1999
- Band / Volume:
- 85
- Heft / Issue:
- 5
- Seitenangaben Beitrag:
- 2652-2657
- BibTeX