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Title:

MEMORY CELL WITH RESISTANCE-SWITCHING LAYERS INCLUDING BREAKDOWN LAYER

Patent number:
EP000002583322B1
Inventor:
KREUPL FRANZ, US; FU CHU-CHEN, US; NIAN YIBO, US
Assignee:
KREUPL FRANZ, US; FU CHU-CHEN, US; NIAN YIBO, US
Patent office:
EU
Publication date patent:
05.04.2017
Year:
2017
Pages:
47
Language:
en
Covered by:
Scopus
TUM Institution:
Hybride Elektronische Systeme
Format:
Text
 BibTeX