KREUPL FRANZ [DE]; PING ER XUAN [US]; ZHANG JINGYAN [US]; XU HUIWEN [CN]MEMORY CELL WITH CARBON SWITCHING MATERIAL HAVING A REDUCED CROSS-SECTIONAL AREA AND METHODS FOR FORMING THE SAME201730
Franz KreuplWireControl : Teilprojekt CNT-CONTROL : Prozesstechnologien für die Halbleiter-Nanodraht-basierte Sensorik mit hohem Durchsatz : Schlussbericht für das BMBF ForschungsvorhabenTechnischen lnformationsbibliothek (TIB), Welfengarten 1 B in 30167 Hannover201741
J. Klein, A. Kuc, A. Nolinder, M. Altzschner, J. Wierzbowski, F. Sigger, F. Kreupl, J. J. Finley, U. Wurstbauer, A. W. Holleitner and M. KaniberRobust Valley Polarization of Helium Ion Modified Atomically Thin MoS22D Materials2017
Max Stelzer, Moritz Jung, Franz KreuplGraphenic Carbon: A Novel Material to Improve the Reliability of Metal-Silicon Contacts IEEE Journal of the Electron Devices Society2017
S. Hommel, N. Killat, A. Altes, T. Schweinboeck, F. KreuplDetermination of doping type by calibrated capacitance scanning microwave microscopyMicroelectronics Reliability2017
Anna Nolinder, Julian Klein, Agnieszka Kuc, Marcus Altzschner, Jakob Wierzbowski, Florian Sigger, Franz Kreupl, Thomas Heine, Jonathan Finley, Ursula Wurstbauer, Alexander Holleitner, and Michael KaniberOptical properties of atomically thin MoS2 exposed to helium ionsVerhandlungen der DPG2017
J. Klein, A. Kuc, A. Nolinder, M. Altzschner, J. Wierzbowski, F. Sigger, F. Kreupl, J. J. Finley, U. Wurstbauer, A. W. Holleitner and M. KaniberHelium ion modified luminescence and valley depolarization of atomically thin MoS2International conference on optics of excitons in confined systems2017
KREUPL FRANZ, US; FU CHU-CHEN, US; NIAN YIBO, USMEMORY CELL WITH RESISTANCE-SWITCHING LAYERS INCLUDING BREAKDOWN LAYER201747
KREUPL FRANZ, US ; SHRIVASTAVA RITU, US MEMORY CELL WITH RESISTANCE-SWITCHING LAYERS AND LATERAL ARRANGEMENT 201747
Max Stelzer, Franz KreuplHigh Performance Metal-Silicon Junctions Based on Graphenic CarbonEmerging Technologies 20172017