弗朗茨·克罗伊普尔, 阿比吉特·班迪奥帕迪亚伊, 陈荣庭, 傅竹晨, 维普尔·彭西里·贾亚塞卡拉, 詹姆斯·凯, 拉古维尔·S·马卡拉, 彼得·拉布金, 乔治·萨马基沙, 张京燕,
具有电阻开关层的存储单元的组合
2015
Reliability and ESD improvement of metal-semiconductor contacts by using a carbon interface laye
2015
Design and properties of low-energy X-ray transmission windows based on graphenic carbon
physica status solidi (b)
2015
Volume 252, Issue 11
Nov
2564–2573
FU CHU-CHEN; KREUPL FRANZ; NIAN YIBO
具有包括击穿层的电阻开关层的存储单元 Memory cell with resistance-switching layers including breakdown layer
2015
Martin Gutsche; Franz Kreupl; Harald Seidl
Vertical interconnect structure, memory device and associated production method
2015
What is RRAM good for? IOT, brain-inspired computing, SCM, all of the above, or none of the above?
IMEC-Stanford RRAM Workshop
2015
KREUPL FRANZ, DE PING ER-XUAN, US XU HUIWEN, US ZHANG JINGYAN, US
MEMORY CELL WITH CARBON SWITCHING MATERIAL HAVING A REDUCED CROSS-SECTIONAL AREA AND METHODS FOR FORMING THE SAME
2015