KREUPL FRANZ [DE]; BANDYOPADHYAY ABHIJIT [US]; CHEN YUNG TIN [US]; FU CHU CHEN [US]; JAYASEKARA WIPUL PEMSIRI [US]; KAI JAMES [US]; MAKALA RAGHUVEER S [IN]; RABKIN PETER [US]; SAMACHISA GEORGE [US]; ZHANG JINGYAN [US].Memory Cell With Resistance-Switching Layers.2013

KREUPL FRANZ [DE]; BANDYOPADHYAY ABHIJIT [US]; CHEN YUNG TIN [US]; FU CHU CHEN [US]; JAYASEKARA WIPUL PEMSIRI [US]; KAI JAMES [US]; MAKALA RAGHUVEER S [IN]; RABKIN PETER [US]; SAMACHISA GEORGE [US]; ZHANG JINGYAN [US].Memory Cell With Resistance-Switching Layers.2013

KREUPL FRANZ [DE]; BANDYOPADHYAY ABHIJIT [US]; CHEN YUNG TIN [US]; FU CHU CHEN [US]; JAYASEKARA WIPUL PEMSIRI [US]; KAI JAMES [US]; MAKALA RAGHUVEER S [IN]; RABKIN PETER [US]; SAMACHISA GEORGE [US]; ZHANG JINGYAN [US].Memory Cell With Resistance-Switching Layers.2013

BANDYOPADHYAY ABHIJIT CHEN YUNG-TIN FU CHU-CHEN JAYASEKARA WIPUL PEMSIRI KAI JAMES KREUPL FRANZ MAKALA RAGHUVEER S RABKIN PETER SAMACHISA GEORGE ZHANG JINGYAN.[EN] Composition of memory cell with resistance-switching layers.2013

FU CHU-CHEN, KREUPL FRANZ, NIAN YIBO.[EN] MEMORY CELL WITH RESISTANCE-SWITCHING LAYERS INCLUDING BREAKDOWN LAYER.2013

KREUPL FRANZ, SHRIVASTAVA RITU.[EN] Memory cell with resistance-switching layers and lateral arrangement.2013

KREUPL FRANZ PING ER-XUAN XU HUIWEN ZHANG JINGYAN.[EN] Memory cell with carbon switching material having a reduced cross-sectional area and methods for forming the same.2013

KREUPL FRANZ, DE MAKALA RAGHUVEER S, US SEKAR DEEPAK CHANDRA, US.Bottom electrodes for use with metal oxide resistivity switching layers.2013

BANDYOPADHYAY ABHIJIT KREUPL FRANZ LI XIAO MIHNEA ANDREI.Chinese [EN] Carbon/tunneling-barrier/carbon diode.2013

KREUPL FRANZ [DE]; BANDYOPADHYAY ABHIJIT [US]; CHEN YUNG TIN [US]; FU CHU CHEN [US]; JAYASEKARA WIPUL PEMSIRI [US]; KAI JAMES [US]; MAKALA RAGHUVEER S [IN]; RABKIN PETER [US]; SAMACHISA GEORGE [US]; ZHANG JINGYAN [US] .KR20130097139 (A) COMPOSITION OF MEMORY CELL WITH RESISTANCE-SWITCHING LAYERS.2013