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Title:

Trap passivation in memory cell with metal oxide switching element

Document type:
Patent
Patent number:
US000008987046B2
Inventor:
SEKAR DEEPAK C, US; KREUPL FRANZ, US ; MAKALA RAGHUVEER S, US ; RABKIN PETER, US ;
Assignee:
SEKAR DEEPAK C, US; KREUPL FRANZ, US ; MAKALA RAGHUVEER S, US ; RABKIN PETER, US ;
Abstract:
Non-volatile storage elements having a reversible resistivity-switching element and techniques for fabricating the same are disclosed herein. The reversible resistivity-switching element may be formed by depositing an oxygen diffusion resistant material (e.g., heavily doped Si, W, WN) over the top electrode. A trap passivation material (e.g., fluorine, nitrogen, hydrogen, deuterium) may be incorporated into one or more of the bottom electrode, a metal oxide region, or the top electrode of the re...     »
Patent office:
us
Publication date patent:
24.03.2015
Year:
2015
Language:
en
Covered by:
Scopus
TUM Institution:
Hybride Elektronische Systeme
Format:
Text
 BibTeX