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弗朗茨·克罗伊普尔, 阿比吉特·班迪奥帕迪亚伊, 陈荣庭, 傅竹晨, 维普尔·彭西里·贾亚塞卡拉, 詹姆斯·凯, 拉古维尔·S·马卡拉, 彼得·拉布金, 乔治·萨马基沙, 张京燕,
具有电阻开关层的存储单元的组合
2015
Sebastian Huebner; Natsuki Miyakawa; Andreas Pahlke; Franz Kreupl
Graphenic Carbon X-Ray Transmission Windows: Design and Properties
MRS fall meeting
MRS
2015
Sebastian Huebner, Natsuki Miyakawa, Andreas Pahlke, Franz Kreupl
Design and properties of low-energy X-ray transmission windows based on graphenic carbon
physica status solidi (b)
2015
Volume 252, Issue 11
Nov
2564–2573
FU CHU-CHEN; KREUPL FRANZ; NIAN YIBO
具有包括击穿层的电阻开关层的存储单元 Memory cell with resistance-switching layers including breakdown layer
2015
Martin Gutsche; Franz Kreupl; Harald Seidl
Vertical interconnect structure, memory device and associated production method
2015
KREUPL FRANZ; SHRIVASTAVA RITU 弗朗茨·克罗伊普尔, 里图·什里瓦斯塔瓦
具有电阻开关层以及侧向布置的存储单元
2015
Franz Kreupl
What is RRAM good for? IOT, brain-inspired computing, SCM, all of the above, or none of the above?
IMEC-Stanford RRAM Workshop
2015
KREUPL FRANZ, DE PING ER-XUAN, US XU HUIWEN, US ZHANG JINGYAN, US
MEMORY CELL WITH CARBON SWITCHING MATERIAL HAVING A REDUCED CROSS-SECTIONAL AREA AND METHODS FOR FORMING THE SAME
2015
KREUPL FRANZ, US ; MAKALA RAGHUVEER S, US ; SEKAR DEEPAK CHANDRA, US
METHOD OF FORMING BOTTOM ELECTRODES FOR USE WITH METAL OXIDE RESISTIVITY SWITCHING LAYERS
2015
Sekar; Deepak C. (San Jose, CA), Kreupl; Franz (Mountain View, CA), Rabkin; Peter (Cupertino, CA), Fu; Chu-Chen (San Ramon, CA)
Non-volatile storage with metal oxide switching element and methods for fabricating the same
2015
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