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Titel:

Trap passivation in memory cell with metal oxide switching element

Dokumenttyp:
Patent
Patent, Gebrauchsmuster Nr.:
US000008987046B2
Erfinder:
SEKAR DEEPAK C, US; KREUPL FRANZ, US ; MAKALA RAGHUVEER S, US ; RABKIN PETER, US ;
Patentanmelder:
SEKAR DEEPAK C, US; KREUPL FRANZ, US ; MAKALA RAGHUVEER S, US ; RABKIN PETER, US ;
Abstract:
Non-volatile storage elements having a reversible resistivity-switching element and techniques for fabricating the same are disclosed herein. The reversible resistivity-switching element may be formed by depositing an oxygen diffusion resistant material (e.g., heavily doped Si, W, WN) over the top electrode. A trap passivation material (e.g., fluorine, nitrogen, hydrogen, deuterium) may be incorporated into one or more of the bottom electrode, a metal oxide region, or the top electrode of the re...     »
Anmeldeland:
us
Veröffentlichungsdatum / Patent:
24.03.2015
Jahr:
2015
Sprache:
en
Nachgewiesen in:
Scopus
TUM Einrichtung:
Hybride Elektronische Systeme
Format:
Text
 BibTeX