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Title:

METHOD OF FORMING BOTTOM ELECTRODES FOR USE WITH METAL OXIDE RESISTIVITY SWITCHING LAYERS

Document type:
Patent
Patent application number:
EP 2548238 B1
Inventor:
SEKAR DEEPAK CHANDRA, US; KREUPL FRANZ, US ; MAKALA RAGHUVEER S, US ;
Assignee:
SEKAR DEEPAK CHANDRA, US; KREUPL FRANZ, US ; MAKALA RAGHUVEER S, US ;
Abstract:
In a first aspect, a metal-insulator-metal ("MIM") stack is provided that includes a first conductive layer, a resistivity-switching layer having a metal oxide layer formed above the first conductive layer, a material layer between the first conductive layer and the resistivity-switching layer, and a second conductive layer above the resistivity-switching layer. The first conductive layer includes a multi-layer metal-silicide stack, and the material layer has a Gibbs free energy of formation per...     »
Patent office:
EP
Publication date patent:
22.04.2015
Year:
2015
Pages:
26 pages
Language:
en
Covered by:
Scopus
TUM Institution:
Hybride Elektronische Systeme
Format:
Text
 BibTeX