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Hybride elektronische Systeme (Prof. Kreupl)
2015
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Title:
具有包括击穿层的电阻开关层的存储单元 Memory cell with resistance-switching layers including breakdown layer
Document type:
Patent
Patent number:
CN 103003971 B
Inventor:
FU CHU-CHEN; KREUPL FRANZ; NIAN YIBO 弗朗茨·克罗伊普尔, 付初辰, 年一波
Assignee:
FU CHU-CHEN; KREUPL FRANZ; NIAN YIBO
Abstract:
一种在三维的读写存储器中的存储器件,包括存储单元。每个存储单元包括与导引元件串联的电阻开关存储元件(RSME)。RSME具有电阻开关层、导电中间层、以及在RSME两端的第一电极和第二电极。击穿层串联地电连接在第二电极与中间层之间。该击穿层在导电状态下保持至少约1-10MΩ的电阻。在存储单元的置位或复位操作中,离子电流在电阻开关层中流动,其有助于开关机制。由于导电中间层的散射,对开关机制没有帮助的电子流被减小,以避免损坏导引元件。提供了用于RSME的不同层的具体材料和材料的组合。
Patent office:
CN
Publication date patent:
03.06.2015
Year:
2015
Language:
Sonstige
TUM Institution:
Hybride Elektronische Systeme
Format:
Text
BibTeX
Occurrences:
mediaTUM Gesamtbestand
Hochschulbibliographie
2015
Fakultäten
Elektrotechnik und Informationstechnik
Professur für Hybride elektronische Systeme (Prof. Kreupl)
mediaTUM Gesamtbestand
Einrichtungen
Schools
TUM School of Computation, Information and Technology
Departments
Electrical Engineering
Hybride elektronische Systeme (Prof. Kreupl)
2015