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- Title:
Modifiable gate stack memory element
- Document type:
- Patent
- Patent number:
- US 8097872 B2
- Inventor:
- KREUPL FRANZ
- Assignee:
- KREUPL FRANZ
- Abstract:
- An apparatus and method for storing information are provided, including using an integrated circuit including a transistor having a channel, a gate oxide layer, a gate electrode, and a modifiable gate stack layer. To store information, the on-resistance of the transistor is changed by causing a non-charge-storage based physical change in the modifiable gate stack layer
- Patent office:
- US
- Publication date patent:
- 17.01.2012
- Year:
- 2012
- Pages:
- 16 pages
- Language:
- en
- TUM Institution:
- Hybride Elektronische Systeme
- Format:
- Text
BibTeX