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LEE SANG-HYUN [KR]; DUNGA MOHAN [IN]; HIGASHITANI MASAAKI [JP]; PHAM TUAN [US]; KREUPL FRANZ [DE]
TW P-/metal floating gate non-volatile storage element
2012
Gutsche; Martin; Kreupl; Franz ; Seidl; Harald
VERTICAL INTERCONNECT STRUCTURE, MEMORY DEVICE AND ASSOCIATED PRODUCTION METHOD
2012
KREUPL FRANZ, DE ; SEIDEL ROBERT, DE
Semiconductor power switch having nanowires
2012
Jacek Baranowski, Franz Kreupl
Report about Project 257829 for the European Commission
2012
12
Christiaan Van Hoof, Franz Kreupl
Report for Project 257856
2012
11
BANDYOPADHYAY ABHIJIT [US]; KREUPL FRANZ [US]; MIHNEA ANDREI [US]; LI XIAO [US]
EP2513994 (A2) CARBON/TUNNELING-BARRIER/CARBON DIODE
2012
KREUPL FRANZ, DE ; SEIDEL ROBERT, DE
HALBLEITER-LEISTUNGSSCHALTER MIT NANODRÄHTEN SOWIE DAFÜR GEEIGNETES HERSTELLUNGSVERFAHREN
2012
21 Seiten
LEE SANGHYUN [US]; DUNGA MOHAN [US]; HIGASHITANI MASAAKI [US]; PHAM TUAN [US]; KREUPL FRANZ [DE]
WO 2012129032 (A1) P-/METAL FLOATING GATE NON-VOLATILE STORAGE ELEMENT
2012
48 pages
COSTA XIYING, US KAI JAMES, US KREUPL FRANZ, DE MAKALA RAGHUVEER S, IN
TW 201212317 A Memory cell with resistance-switching layers
2012
KREUPL FRANZ, DE SHRIVASTAVA RITU, US
TW 201212318 A Memory cell with resistance-switching layers and lateral arrangement
2012
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