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- Titel:
Modifiable gate stack memory element
- Dokumenttyp:
- Patent
- Patent, Gebrauchsmuster Nr.:
- US 8097872 B2
- Erfinder:
- KREUPL FRANZ
- Patentanmelder:
- KREUPL FRANZ
- Abstract:
- An apparatus and method for storing information are provided, including using an integrated circuit including a transistor having a channel, a gate oxide layer, a gate electrode, and a modifiable gate stack layer. To store information, the on-resistance of the transistor is changed by causing a non-charge-storage based physical change in the modifiable gate stack layer
- Anmeldeland:
- US
- Veröffentlichungsdatum / Patent:
- 17.01.2012
- Jahr:
- 2012
- Seiten/Umfang:
- 16 pages
- Sprache:
- en
- TUM Einrichtung:
- Hybride Elektronische Systeme
- Format:
- Text
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