System design of a HV/LV DC-DC converter with the evaluation of GaN and Si chip-embedding
Document type:
Konferenzbeitrag
Contribution type:
Textbeitrag / Aufsatz
Author(s):
Ahmed Eldistawy; Marcelo Lobo Heldwein; Mark Nils Muenzer; Peter Weiss; Sam Chan; Giampiero Ciammetti
Abstract:
This work discusses the usage of two new power semiconductor technologies. One is Galium nitride (GaN) switches which belong to the wide-band gap devices. The second one is chip-embedding of silicon (Si) devices inside the PCB. This will be done by explaining the two new technologies and then providing a system design for a HV/LV DC-DC converter utilizing both these two technologies which could be used in automotive applications for the converter charging the auxiliary 12 V battery.
Book / Congress title:
Conference Proceedings 2024 IEEE Applied Power Electronics Conference and Exposition (APEC)