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Title:

System design of a HV/LV DC-DC converter with the evaluation of GaN and Si chip-embedding

Document type:
Konferenzbeitrag
Contribution type:
Textbeitrag / Aufsatz
Author(s):
Ahmed Eldistawy; Marcelo Lobo Heldwein; Mark Nils Muenzer; Peter Weiss; Sam Chan; Giampiero Ciammetti
Abstract:
This work discusses the usage of two new power semiconductor technologies. One is Galium nitride (GaN) switches which belong to the wide-band gap devices. The second one is chip-embedding of silicon (Si) devices inside the PCB. This will be done by explaining the two new technologies and then providing a system design for a HV/LV DC-DC converter utilizing both these two technologies which could be used in automotive applications for the converter charging the auxiliary 12 V battery.
Book / Congress title:
Conference Proceedings 2024 IEEE Applied Power Electronics Conference and Exposition (APEC)
Date of congress:
25-29 February 2024
Publisher:
IEEE
Date of publication:
02.05.2024
Year:
2024
Quarter:
2. Quartal
Year / month:
2024-05
Month:
May
Print-ISBN:
979-8-3503-1665-0
E-ISBN:
979-8-3503-1664-3, 979-8-3503-1663-6
Bookseries ISSN:
1048-2334, 2470-6647
Reviewed:
ja
Language:
en
Fulltext / DOI:
doi:10.1109/APEC48139.2024.10509393
WWW:
https://ieeexplore.ieee.org/document/10509393/authors#authors
Semester:
SS 24
TUM Institution:
Lehrstuhl für Hochleistungs-Umrichtersysteme
Copyright statement:
(c) IEEE
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