Temperature Dependence of the Bipolar Activation and the Leakage Currents of 10 kV 4H-SiC JBS-Diodes

Lechner, B.; Huang, Y.; Schaub, S.; Wachutka, G.

Titel:: Temperature Dependence of the Bipolar Activation and the Leakage Currents of 10 kV 4H-SiC JBS-Diodes
Dokumenttyp:: Konferenzbeitrag
Autor(en):: Lechner, B.; Huang, Y.; Schaub, S.; Wachutka, G.
Kongress- / Buchtitel:: Proceedings of ICSCRM
Datum der Konferenz:: 29. September- 04. Oktober
Jahr:: 2019
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