Huang, Y.; Erlbacher, T.; Buettner, J.; Wachutka, G.A Trade-off Between Nominal Forward Current Density and Surge Current Capability for 4,5 kV SiC MPS DiodesProceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs2016
Huang, Y.; Wachutka, G.Comparative Study of Contact Topographies of 4,5 kV SiC MPS Diodes for Optimizing the Forward Characteristics117-120Proceedings of Simulation of Semiconductor Processes and Devices2016
Basler, V.; Basler, T.; Pertermann, E.; Baburske, R.; Lutz, J.; Wachutka, G.Compact PIN-Diode Model including Dynamic Avalanche and Lifetime Control in MATLAB2016
Toechterle, C.; Pfirsch, F.; Sandow, C.; Wachutka, G.Influence of Quasi-3D Filament Geometry onf the Latch-Up Threshold of High-Voltage Trench-IGBTs177 - 180Proceedings of Simulation of Semiconductor Processes and Devices2016
Behlert, R.; Schrag, G.; Wachutka, G.; Wieland, R.; Kutter, C.Design of an Integrated Piezoelectric Micro-Flapper Based on Bionic Principles79 - 82Proceedings of Symposium on Design, Test, Integration & Packaging of MEMS and MOEMS2016
Schrag, G.; Kuenzig, T.; Dehe, A.Enhanced Design of Microsystems by Combining Lumped and Distributed System-level Models61-65Proceedings of DTIP 20162016, Symposium on Design, Test, Integration & Packaging of MEMS and MOEMSIEEE2016
Basler, V.; Hoelzl, W.; Wachutka, G.Physical Modeling and High-Fidelity Simulation of the Transient Behavior of Multiply-Contacted Power Busbars543-549PCIM Europe 2016, 10 - 12 MayVDE Verlag GmbH2016