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- Title:
PROPERTIES OF POLYCRYSTALLINE SILICON PREPARED BY CHEMICAL-TRANSPORT IN HYDROGEN PLASMA AT TEMPERATURES BETWEEN 80-DEGREES-C AND 400-DEGREES-C
- Author(s):
- VEPREK, S; IQBAL, Z; OSWALD, HR; al., et
- Journal title:
- JOURNAL OF PHYSICS C-SOLID STATE PHYSICS
- Year:
- 1981
- Journal volume:
- 14
- Journal issue:
- 3
- Pages contribution:
- 295-308
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