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- Titel:
PROPERTIES OF POLYCRYSTALLINE SILICON PREPARED BY CHEMICAL-TRANSPORT IN HYDROGEN PLASMA AT TEMPERATURES BETWEEN 80-DEGREES-C AND 400-DEGREES-C
- Autor(en):
- VEPREK, S; IQBAL, Z; OSWALD, HR; al., et
- Zeitschriftentitel:
- JOURNAL OF PHYSICS C-SOLID STATE PHYSICS
- Jahr:
- 1981
- Band / Volume:
- 14
- Heft / Issue:
- 3
- Seitenangaben Beitrag:
- 295-308
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