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Title:

High Performance Graphenic Carbon-Silicon Contacts

Document type:
Konferenzbeitrag
Contribution type:
Poster
Author(s):
Max Stelzer, Moritz Jung, Ursula Wurstbauer, Alexander Holleitner, Franz Kreupl
Abstract:
Titanium silicide (TiSi) is commonly used to establish low-barrier height contacts to silicon, like in FinFETs or Schottky diodes. TiSi diffuses into the active region under high current stress, like during an electro-static discharge (ESD) event. Graphenic carbon (GC) contacts to silicon are superior to a TiSi-Si junction. Carbon gives the same low Schottky barrier height (SBH) of 0.45 eV or even lower, but the C-Si contact can be over 1 billion times more stable against high current pulses. The deposition is possible with a CVD process (≤ 1000°C) or even with a modified sputter process at < 400 °C. The good electrical conductivity and low optical reflectivity render graphenic carbon a particularly suitable electrode material for Schottky photodiodes.
Book / Congress title:
Infineon University
Organization:
Infineon
Date of congress:
24.10.2019
Date of publication:
24.10.2019
Year:
2019
Language:
en
TUM Institution:
Hybride Elektronische Systeme
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