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- Titel:
High Performance Graphenic Carbon-Silicon Contacts
- Dokumenttyp:
- Konferenzbeitrag
- Art des Konferenzbeitrags:
- Poster
- Autor(en):
- Max Stelzer, Moritz Jung, Ursula Wurstbauer, Alexander Holleitner, Franz Kreupl
- Abstract:
- Titanium silicide (TiSi) is commonly used to establish low-barrier height contacts to silicon, like in FinFETs or Schottky diodes. TiSi diffuses into the active region under high current stress, like during an electro-static discharge (ESD) event. Graphenic carbon (GC) contacts to silicon are superior to a TiSi-Si junction. Carbon gives the same low Schottky barrier height (SBH) of 0.45 eV or even lower, but the C-Si contact can be over 1 billion times more stable against high current pulses. The deposition is possible with a CVD process (≤ 1000°C) or even with a modified sputter process at < 400 °C. The good electrical conductivity and low optical reflectivity render graphenic carbon a particularly suitable electrode material for Schottky photodiodes.
- Kongress- / Buchtitel:
- Infineon University
- Ausrichter der Konferenz:
- Infineon
- Datum der Konferenz:
- 24.10.2019
- Publikationsdatum:
- 24.10.2019
- Jahr:
- 2019
- Sprache:
- en
- TUM Einrichtung:
- Hybride Elektronische Systeme
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