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Titel:

High Performance Graphenic Carbon-Silicon Contacts

Dokumenttyp:
Konferenzbeitrag
Art des Konferenzbeitrags:
Poster
Autor(en):
Max Stelzer, Moritz Jung, Ursula Wurstbauer, Alexander Holleitner, Franz Kreupl
Abstract:
Titanium silicide (TiSi) is commonly used to establish low-barrier height contacts to silicon, like in FinFETs or Schottky diodes. TiSi diffuses into the active region under high current stress, like during an electro-static discharge (ESD) event. Graphenic carbon (GC) contacts to silicon are superior to a TiSi-Si junction. Carbon gives the same low Schottky barrier height (SBH) of 0.45 eV or even lower, but the C-Si contact can be over 1 billion times more stable against high current pulses. The deposition is possible with a CVD process (≤ 1000°C) or even with a modified sputter process at < 400 °C. The good electrical conductivity and low optical reflectivity render graphenic carbon a particularly suitable electrode material for Schottky photodiodes.
Kongress- / Buchtitel:
Infineon University
Ausrichter der Konferenz:
Infineon
Datum der Konferenz:
24.10.2019
Publikationsdatum:
24.10.2019
Jahr:
2019
Sprache:
en
TUM Einrichtung:
Hybride Elektronische Systeme
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