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- Title:
High Performance Graphenic Carbon-Silicon Contacts
- Document type:
- Konferenzbeitrag
- Contribution type:
- Poster
- Author(s):
- Max Stelzer, Moritz Jung, Ursula Wurstbauer, Alexander Holleitner, Franz Kreupl
- Abstract:
- Titanium silicide (TiSi) is commonly used to establish low-barrier height contacts to silicon, like in FinFETs or Schottky diodes. TiSi diffuses into the active region under high current stress, like during an electro-static discharge (ESD) event. Graphenic carbon (GC) contacts to silicon are superior to a TiSi-Si junction. Carbon gives the same low Schottky barrier height (SBH) of 0.45 eV or even lower, but the C-Si contact can be over 1 billion times more stable against high current pulses. The deposition is possible with a CVD process (≤ 1000°C) or even with a modified sputter process at < 400 °C. The good electrical conductivity and low optical reflectivity render graphenic carbon a particularly suitable electrode material for Schottky photodiodes.
- Book / Congress title:
- Infineon University
- Organization:
- Infineon
- Date of congress:
- 24.10.2019
- Date of publication:
- 24.10.2019
- Year:
- 2019
- Language:
- en
- TUM Institution:
- Hybride Elektronische Systeme
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