2.3 µm range InP-based type-II quantum well Fabry-Perot lasers heterogeneously integrated on a silicon photonic integrated circuit

R. J. Wang, S. Sprengel, G. Boehm, M. Muneeb, R. Baets, M. C. Amann, G. Roelkens

doi:10.1364/OE.24.021081

Titel:: 2.3 µm range InP-based type-II quantum well Fabry-Perot lasers heterogeneously integrated on a silicon photonic integrated circuit
Dokumenttyp:: Zeitschriftenaufsatz
Autor(en):: R. J. Wang, S. Sprengel, G. Boehm, M. Muneeb, R. Baets, M. C. Amann, G. Roelkens
Zeitschriftentitel:: Optics Express
Jahr:: 2016
Band / Volume:: 24
Heft / Issue:: 18
Seitenangaben Beitrag:: 21081-21089
Volltext / DOI:: doi:10.1364/OE.24.021081
BibTeX