Huang, Y.; Erlbacher, T.; Buettner, J.; Wachutka, G.
A Trade-off Between Nominal Forward Current Density and Surge Current Capability for 4,5 kV SiC MPS Diodes
Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs
2016

Huang, Y.; Wachutka, G.
Comparative Study of Contact Topographies of 4,5 kV SiC MPS Diodes for Optimizing the Forward Characteristics
117-120
Proceedings of Simulation of Semiconductor Processes and Devices
2016

Basler, V.; Basler, T.; Pertermann, E.; Baburske, R.; Lutz, J.; Wachutka, G.
Compact PIN-Diode Model including Dynamic Avalanche and Lifetime Control in MATLAB
2016

Toechterle, C.; Pfirsch, F.; Sandow, C.; Wachutka, G.
Influence of Quasi-3D Filament Geometry onf the Latch-Up Threshold of High-Voltage Trench-IGBTs
177 - 180
Proceedings of Simulation of Semiconductor Processes and Devices
2016

Behlert, R.; Schrag, G.; Wachutka, G.; Wieland, R.; Kutter, C.
Design of an Integrated Piezoelectric Micro-Flapper Based on Bionic Principles
79 - 82
Proceedings of Symposium on Design, Test, Integration & Packaging of MEMS and MOEMS
2016

Schrag, G.; Kuenzig, T.; Dehe, A.
Enhanced Design of Microsystems by Combining Lumped and Distributed System-level Models
61-65
Proceedings of DTIP 2016
2016, Symposium on Design, Test, Integration & Packaging of MEMS and MOEMS
IEEE
2016

Basler, V.; Hoelzl, W.; Wachutka, G.
Physical Modeling and High-Fidelity Simulation of the Transient Behavior of Multiply-Contacted Power Busbars
543-549
PCIM Europe 2016, 10 - 12 May
VDE Verlag GmbH
2016