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- Title:
Memory cell with silicon-containing carbon switching layer and methods for forming the same
- Document type:
- Patent
- Patent number:
- US 8,237,146
- Inventor:
- Kreupl; Franz (Mountain View, CA), Zhang; Jingyan (Santa Clara, CA), Xu; Huiwen (Sunnyvale, CA)
- Assignee:
- Kreupl; Franz (Mountain View, CA), Zhang; Jingyan (Santa Clara, CA), Xu; Huiwen (Sunnyvale, CA)
- Patent office:
- US
- Publication date patent:
- 07.08.2012
- Year:
- 2012
- Language:
- en
- TUM Institution:
- Hybride Elektronische Systeme
- Format:
- Text
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