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Title:

Forming and training processes for resistance-change memory cell

Document type:
Patent
Patent number:
US 8216862 B2
Inventor:
KREUPL FRANZ, US SEKAR DEEPAK C, US
Assignee:
KREUPL FRANZ, US SEKAR DEEPAK C, US
Patent office:
US
Publication date patent:
10.07.2012
Year:
2012
Language:
en
TUM Institution:
Hybride Elektronische Systeme
Format:
Text
 BibTeX