TW 201212319 A Composition of memory cell with resistance-switching layers
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Patentanmeldung
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TW 201212319 A
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BANDYOPADHYAY ABHIJIT, US CHEN YUNG-TIN, US FU CHU-CHEN, US JAYASEKARA WIPUL PEMSIRI, US KAI JAMES, US KREUPL FRANZ, DE MAKALA RAGHUVEER S, IN RABKIN PETER, US SAMACHISA GEORGE, US ZHANG JINGYAN, US
Patentanmelder:
BANDYOPADHYAY ABHIJIT, US CHEN YUNG-TIN, US FU CHU-CHEN, US JAYASEKARA WIPUL PEMSIRI, US KAI JAMES, US KREUPL FRANZ, DE MAKALA RAGHUVEER S, IN RABKIN PETER, US SAMACHISA GEORGE, US ZHANG JINGYAN, US