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Title:

TW 201212317 A Memory cell with resistance-switching layers

Document type:
Patentanmeldung
Patent application number:
TW 201212317 A
Inventor:
COSTA XIYING, US KAI JAMES, US KREUPL FRANZ, DE MAKALA RAGHUVEER S, IN
Assignee:
COSTA XIYING, US KAI JAMES, US KREUPL FRANZ, DE MAKALA RAGHUVEER S, IN
Patent office:
TW
Publication date application:
16.03.2012
Year:
2012
Language:
Sonstige
TUM Institution:
Hybride Elektronische Systeme
Format:
Text
 BibTeX