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Titel:

WO 2012129032 (A1) P-/METAL FLOATING GATE NON-VOLATILE STORAGE ELEMENT

Dokumenttyp:
Patentanmeldung
Patentanmeldung Nr.:
WO 2012129032 (A1)
Erfinder:
LEE SANGHYUN [US]; DUNGA MOHAN [US]; HIGASHITANI MASAAKI [US]; PHAM TUAN [US]; KREUPL FRANZ [DE]
Patentanmelder:
LEE SANGHYUN [US]; DUNGA MOHAN [US]; HIGASHITANI MASAAKI [US]; PHAM TUAN [US]; KREUPL FRANZ [DE]
Abstract:
Non-volatile storage elements having a P-/metal floating gate are disclosed herein. The floating gate may have a P-region near the tunnel oxide, and may have a metal region near the control gate. A P-region near the tunnel oxide helps provide good data retention. A metal region near the control gate helps to achieve a good coupling ratio between the control gate and floating gate. Therefore, programming of non-volatile storage elements is efficient. Also, erasing the non-volatile storage element...     »
Anmeldeland:
WO
Veröffentlichungsdatum / Anmeldung:
27.09.2012
Jahr:
2012
Seiten/Umfang:
48 pages
Sprache:
en
TUM Einrichtung:
Hybride Elektronische Systeme
Format:
Text
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