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Titel:

Semiconductor power switch having nanowires

Dokumenttyp:
Patent
Patent, Gebrauchsmuster Nr.:
US 8319259 B2
Erfinder:
KREUPL FRANZ, DE ; SEIDEL ROBERT, DE
Patentanmelder:
KREUPL FRANZ, DE ; SEIDEL ROBERT, DE
Abstract:
A semiconductor power switch and method is disclosed. In one Embodiment, the semiconductor power switch has a source contact, a drain contact, a semiconductor structure which is provided between the source contact and the drain contact, and a gate which can be used to control a current flow through the semiconductor structure between the source contact and the drain contact. The semiconductor structure has a plurality of nanowires which are connected in parallel and are arranged in such a manner...     »
Anmeldeland:
US
Veröffentlichungsdatum / Patent:
27.11.2012
Jahr:
2012
Sprache:
en
Nachgewiesen in:
Scopus
TUM Einrichtung:
Hybride Elektronische Systeme
Format:
Text
 BibTeX