Structural properties of graded In<sub>
                  x
               </sub>Ga 1−x
	  As metamorphic buffer layers for quantum dots emitting in the telecom bands

Title:: Structural properties of graded In_xGa 1−x As metamorphic buffer layers for quantum dots emitting in the telecom bands
Document type:: Zeitschriftenaufsatz
Author(s):: Scaparra, Bianca; Ajay, Akhil; Avdienko, Pavel S; Xue, Yuyang; Riedl, Hubert; Kohl, Paul; Jonas, Björn; Costa, Beatrice; Sirotti, Elise; Schmiedeke, Paul; Villafañe, Viviana; Sharp, Ian D; Zallo, Eugenio; Koblmüller, Gregor; Finley, Jonathan J; Müller, Kai
Journal title:: Materials for Quantum Technology
Year:: 2023
Journal volume:: 3
Journal issue:: 3
Pages contribution:: 035004
Fulltext / DOI:: doi:10.1088/2633-4356/aced32
Publisher:: IOP Publishing
E-ISSN:: 2633-4356
Date of publication:: 14.08.2023
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Structural properties of graded In x Ga 1−x As metamorphic buffer layers for quantum dots emitting in the telecom bands