Structural properties of graded In<sub>
                  x
               </sub>Ga 1−x
	  As metamorphic buffer layers for quantum dots emitting in the telecom bands

Titel:: Structural properties of graded In_xGa 1−x As metamorphic buffer layers for quantum dots emitting in the telecom bands
Dokumenttyp:: Zeitschriftenaufsatz
Autor(en):: Scaparra, Bianca; Ajay, Akhil; Avdienko, Pavel S; Xue, Yuyang; Riedl, Hubert; Kohl, Paul; Jonas, Björn; Costa, Beatrice; Sirotti, Elise; Schmiedeke, Paul; Villafañe, Viviana; Sharp, Ian D; Zallo, Eugenio; Koblmüller, Gregor; Finley, Jonathan J; Müller, Kai
Zeitschriftentitel:: Materials for Quantum Technology
Jahr:: 2023
Band / Volume:: 3
Heft / Issue:: 3
Seitenangaben Beitrag:: 035004
Volltext / DOI:: doi:10.1088/2633-4356/aced32
Verlag / Institution:: IOP Publishing
E-ISSN:: 2633-4356
Publikationsdatum:: 14.08.2023
BibTeX

Vorkommen:

Structural properties of graded In x Ga 1−x As metamorphic buffer layers for quantum dots emitting in the telecom bands