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Title:

Resolving Trap-caused Charges by Scanning Microwave Microscopy

Document type:
Konferenzbeitrag
Contribution type:
Vortrag / Präsentation
Author(s):
S. Hommel, N. Killat, T. Schweinboeck, A. Altes , F. Kreupl
Abstract:
Trapping effects are playing an essential role in semiconductor devices. The localization of trapping effects with a high spatial resolution can provide valuable information on the interface and oxide quality in state of the art semiconductor devices. On the example of a Si diode with suspected oxide traps, a method based on Scanning Microwave Microscopy (SMM) is shown to resolve charge carriers, which accumulate within the silicon due to trapping effects at the Si/SiO2 interface.
Editor:
IEEE
Book / Congress title:
The International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
Date of congress:
16.-19.7
Date of publication:
18.07.2018
Year:
2018
Pages:
6
Reviewed:
ja
Publication format:
WWW
TUM Institution:
Hybride Elektronische Systeme
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