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Title:

Highly Reliable Contacts to Silicon Enabled by Low Temperature Sputtered Graphenic Carbon

Document type:
Zeitschriftenaufsatz
Author(s):
Max Stelzer ; Moritz Jung ; Ursula Wurstbauer ; Alexander Holleitner ; Franz Kreupl
Abstract:
Titanium silicide (TiSi) contacts are frequently used metal-silicon contacts but are known to diffuse into the active region under high current density stress pulses. Recently, we demonstrated that graphenic carbon (GC) deposited by CVD at 1000∘C on silicon has the same low Schottky barrier as TiSi, but a much improved reliability against high current density stress pulses. In this paper we demonstrate now that the deposition of graphenic carbon is possible at 100∘C -400∘C by a sputter process....     »
Journal title:
IEEE Journal of the Electron Devices Society
Year:
2019
Covered by:
Scopus
Reviewed:
ja
Language:
en
Fulltext / DOI:
doi:10.1109/JEDS.2019.2894975
WWW:
https://ieeexplore.ieee.org/document/8624356
TUM Institution:
Hybride Elektronische Systeme
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