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Title:

Low Temperature Sputtered Graphenic Carbon Enables Highly Reliable Contacts to Silicon

Document type:
Konferenzbeitrag
Contribution type:
Vortrag / Präsentation
Author(s):
M. Stelzer, M. Jung, U. Wurstbauer, A.W. Holleitner, F. Kreupl
Abstract:
Titanium silicide (TiSi) contacts are commonly used metal- silicon contacts but are known to diffuse into the active region under high current stress. Recently we demonstrated that graphenic carbon (GC) deposited by CVD has the same low Schottky barrier on silicon as TiSi, but a much improved reliability against high current stress. The drawback of the CVD-GC is the required deposition temperature of ~ 900 °C. In this paper we demonstrate n ow that the deposition of graphenic carbon is...     »
Book / Congress title:
IEDM 2018
Congress (additional information):
IEEE International Electron Devices Meeting (IEDM)
Organization:
IEEE
Year:
2018
TUM Institution:
Hybride Elektronische Systeme
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