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- Title:
Resolving trapping effects by scanning microwave microscopy
- Document type:
- Magazinartikel
- Author(s):
- S. Hommel, N. Killat, T. Schweinboeck, A. Altes , F. Kreupl
- Abstract:
- Trapping effects are playing an essential role in semiconductor devices. The localization of trapping effects with a high spatial resolution can provide valuable information on the interface and oxide quality in state of the art semiconductor devices. On the example of a Si diode with suspected oxide traps, a method based on Scanning Microwave Microscopy (SMM) is shown to resolve charge carriers, which accumulate within the silicon due to trapping effects at the Si/SiO2 interface.
- Journal title:
- Microelectronics Reliability
- Year:
- 2019
- Covered by:
- Scopus
- WWW:
- https://doi.org/10.1016/j.microrel.2018.11.018
- TUM Institution:
- Hybride Elektronische Systeme
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