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Titel:

Resolving trapping effects by scanning microwave microscopy

Dokumenttyp:
Magazinartikel
Autor(en):
S. Hommel, N. Killat, T. Schweinboeck, A. Altes , F. Kreupl
Abstract:
Trapping effects are playing an essential role in semiconductor devices. The localization of trapping effects with a high spatial resolution can provide valuable information on the interface and oxide quality in state of the art semiconductor devices. On the example of a Si diode with suspected oxide traps, a method based on Scanning Microwave Microscopy (SMM) is shown to resolve charge carriers, which accumulate within the silicon due to trapping effects at the Si/SiO2 interface.
Zeitschriftentitel:
Microelectronics Reliability
Jahr:
2019
Nachgewiesen in:
Scopus
WWW:
https://doi.org/10.1016/j.microrel.2018.11.018
TUM Einrichtung:
Hybride Elektronische Systeme
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