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- Titel:
Resolving Trap-caused Charges by Scanning Microwave Microscopy
- Dokumenttyp:
- Zeitschriftenaufsatz
- Autor(en):
- S Hommel, N Killat, T Schweinboeck, T Altes, F Kreupl
- Abstract:
- Trapping effects are playing an essential role in semiconductor devices. The localization of trapping effects with a high spatial resolution can provide valuable information on the interface and oxide quality in state of the art semiconductor devices. On the example of a Si diode with suspected oxide traps, a method based on Scanning Microwave Microscopy (SMM) is shown to resolve charge carriers, which accumulate within the silicon due to trapping effects at the Si/Si02 interface.
- Zeitschriftentitel:
- 2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
- Jahr:
- 2018
- Nachgewiesen in:
- Scopus
- Sprache:
- en
- Volltext / DOI:
- doi:10.1109/IPFA.2018.8452526
- WWW:
- https://ieeexplore.ieee.org/abstract/document/8452526/
- Status:
- Postprint / reviewed
- TUM Einrichtung:
- Hybride Elektronische Systeme
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