Graphenic Carbon as etching mask: patterning with photolithography and KOH etching

The wet anistropic etching process is widely used in the field of micromachining (MEMS), particularly for commercial products as accelometers or sensors. Hard masks like oxide or nitride play a key role for the transfer of patterns to the substrate after the lithography process. This work reports on the use of polycrystalline graphenic carbon (GC), which forms covalent bonds to silicon, as an etch mask for wet chemical processing. It is shown a simple method to pattern structures on (1 0 0) silicon wafers. Different geometrical shapes were printed on the substrate with dimensions ranging from 10 to 50 micrometers.     «

The wet anistropic etching process is widely used in the field of micromachining (MEMS), particularly for commercial products as accelometers or sensors. Hard masks like oxide or nitride play a key role for the transfer of patterns to the substrate after the lithography process. This work reports on the use of polycrystalline graphenic carbon (GC), which forms covalent bonds to silicon, as an etch mask for wet chemical processing. It is shown a simple method to pattern structures on (1 0 0) sili...     »