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- Title:
Resolving Trap-caused Charges by Scanning Microwave Microscopy
- Document type:
- Zeitschriftenaufsatz
- Author(s):
- S Hommel, N Killat, T Schweinboeck, T Altes, F Kreupl
- Abstract:
- Trapping effects are playing an essential role in semiconductor devices. The localization of trapping effects with a high spatial resolution can provide valuable information on the interface and oxide quality in state of the art semiconductor devices. On the example of a Si diode with suspected oxide traps, a method based on Scanning Microwave Microscopy (SMM) is shown to resolve charge carriers, which accumulate within the silicon due to trapping effects at the Si/Si02 interface.
- Journal title:
- 2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
- Year:
- 2018
- Covered by:
- Scopus
- Language:
- en
- Fulltext / DOI:
- doi:10.1109/IPFA.2018.8452526
- WWW:
- https://ieeexplore.ieee.org/abstract/document/8452526/
- Status:
- Postprint / reviewed
- TUM Institution:
- Hybride Elektronische Systeme
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