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Title:

Simulation of the Transient Potential Distribution On-Chip During a Fast ESD Event Based on a Parametric Measurement Analysis

Document type:
Zeitschriftenaufsatz
Author(s):
Lena Zeitlhoefler; Friedrich zur Nieden; Kai Esmark; Gemot Langguth; Martin Sauter; Franz Kreupl
Abstract:
ESD events on semiconductor devices in the pico-or nanosecond range cause local potential differences and are often responsible for severe damages of an IC. The presented simulation approach focuses on the simulation of the transient and local potential distribution on the chip during a discharge on wafer-level. In the approach, the total charge is distributed either via the top metal layer and also via the underlying substrate layer dependent on the IC design. The approach consists of a network...     »
Congress / additional information:
2020 International Symposium on Electromagnetic Compatibility-EMC EUROPE
Journal title:
2020 International Symposium on Electromagnetic Compatibility-EMC EUROPE
Year:
2020
Reviewed:
ja
Language:
en
Fulltext / DOI:
doi:10.1109/EMCEUROPE48519.2020.9245864
WWW:
https://ieeexplore.ieee.org/abstract/document/9245864
TUM Institution:
Hybride Elektronische Systeme
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